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Corporate history

Solid foundation for the microelectronics industry in Russia

Corporate history

2015
After dedicated equipment installation and setup in 2015 Mikron plans the commercial start of the 65 nm manufacturing line.
2014
In 2014 Mikron has started manufacturing of the first Russian dual-core microprocessors Elbrus-2SM developed by MCST. The microprocessor was produced using the 90 nm design rules.
2013
Mikron supplied in-house developed and manufactured microprocessors for the Russian biometric foreign pass.
Mikron finished the development of own 65 nm technology.
Mikron won the contract with the Moscow underground and became the official supplier of “Troyka” smart-card for the Moscow underground fare collection system
2012
90 nm manufacturing line was started in collaboration with the leading international semiconductor company STMicroelectronics. The new production line significantly increased Mikron manufacturing capacity: till 36.000 8”-wafers per year.
In 2012 Mikron finished the development of dedicated crypto-protected microprocessor for the Russian Universal Electronic Citizen Card.
2011
Research institute for molecular electronics (MERI, JS) was founded on the base of Mikron R&D center. The main task for the new company is the development of Mikron technological portfolio. Gennady Krasnikov was appointed Director General of the new company.
Mikron was recognized among top 10 leading innovative companies in Russia by Fast Company.
2010
Mikron signed the agreement with the STMicroelectronics about the technology transfer for 90 nm manufacturing line.
2009
Rusnano and Sistema signed the agreement about the establishment of a 90 nm manufacturing facility on the base of Mikron infrastructure. The new manufacturing facility was to work with the 8” wafers. STMicroelectronics was to become the technology partner.
Mikron validated its compliance with the requirements of the international environmental management system ISO 14001:2004. The compliance audit was carried out by Bureau Veritas Certification Rus.
2008
Mikron Director General Gennady Krasnikov was awarded the honorary Order For Merit to the Fatherland, was chosen member of the Russian Academy of Sciences and became member of the GSA (Global Semiconductor Alliance) Leadership Council.
Mikron passed certification according to the requirements of the international environmental management system ISO 14001. Mikron was the first Russian company to receive such certification.
2007
Mikron (under the brand name Sitronics Microelectronics) became member of the international EUROSMART association and Global Semiconductor Alliance (GSA). 180 nm manufacturing line was commercially launched
2006
Mikron signed agreement with STMicroelectronics for the technology transfer for the 180 nm manufacturing line. Mikron started manufacturing of chip-modules for contact smart-cards.
In December Mikron started full-cycle RFID ticket manufacturing. At the same time first RFID tickets were supplied to Moscow underground.
2001–2005
Mikron was awarded by Russian government for product quality. In 2001 Mikron became the head company of the holding company SItronics Microelectronis.
Mikron developed design and manufacturing rules for the micromechanical fibre-optic switch. First test samples were produced.
In 2002 Mikron shares were listed at stock exchange.
In 2005 a new design center and assembly facility for LCD monitor components started operations.
2000
Mikron became part of the holding company SItronics Microelectronis.
A new company “Smart cards” was established to serve the needs of the emerging Russian smart card market.
VSP-Mikron was established on the base of the Voronezh semiconductor manufacturing facility.
1999
Mikron was certified for the compliance with the requirements of the international Quality Management System ISO 9000. The audit was carried out by Bureau Veritas Quality International.
1996 – 2000
New series of AD and DA converters were developed. Mikron mastered manufacturing of more than 200 IC types previously manufactured by other Russian semiconductor vendors. New clean rooms started operations. Mikron mastered manufacturing using 6” wafers with 0.8 µm design rules.
1991 – 1995
Gennady Krasnikov became Mikron Director General. Under his leadership Mikron continued development and mastering of new items and process technologies despite the general decline in Russian economy.
A new clean room with cleanness grade 10 was put into operation.
Mikron finished development of the HCMOS process technology.
Mikron qualified for working abroad. IC supplies for Samsung started.
1986 – 1990
Mikron manufactured first programmable gate array logic ICs. PAL-series ICs and ICs for TV-sets were mastered.
1971 – 1975
All 4 Mikron manufacturing sections of totally more than 60 thousand square meters were ready for equipment installation and assembling in 1971. Mikron manufactured ICs from the 155 series were nominated and qualified as the top quality grade. Mikron received the honorary quality award in 1972.
Designed by Mikron specialists ICs from the 100 and 500 series went to mass-production. These logic ICs boosted operation speed of 2 ns per gate and provided the needed hardware components for many outstanding innovations of that time, for example:
• The giant “Elbrus-2” computer
• “Ryad” equipment aimed at resolving many standing issues in national economy, ecology and defense
• Unified computer system used in national economy of the Soviet coalition countries
• The “Bulat” computer used for defense purposes
1978 – 1985
Mikron team has finished the development of the universal rapid microprocessor family. This microprocessor family found its application in the manufacturing of the components for the national air defense system.
The 100 million’s IC was manufactured by Mikron in 1980.
Mikron and MERI achievements in the development and creation of the unified computer system were honored with the one of the most respected awards in the Soviet Union: upon the decree of the Presidium of the Supreme Council of the USSR from 04/12/1983 Mikron was awarded the Order of the Red Banner of Labour.
Mikron supplied ICs for the Mars and Venus space plan.
Mikron started manufacturing of the CMOS-based random-access storage units. First clean rooms were put into life at Mikron.
1966 – 1970
First integrated circuit with 2 bipolar transistors was registered in the official state registry of the Soviet Union in 1966. Pilot IC manufacturing shop was launched.
Production volume reached 100.000 ICs in 1966.
On February 1st 1967 upon the order of the USSR Minister of electronics industry semiconductor manufacturing facility Mikron was founded.
A range of microelectronics-related technological advances was achieved during this time for the first time in Soviet history. For example, planar technology for gallium-arsenide ICs was mastered, molded IC case was manufactured and moulding material was developed, emitter-coupled logic, digital (TTL) and analog ICs were designed and manufactured.
By 1970-th more than 3.5 million ICs for various industry segments were manufactured.
1965
On January 25th, Russian physical scientist Kamil Valiev was appointed Director General of the Research Institute for Molecular Electronics. In the beginning of 1965 183 people worked for the newly-founded institution. The staff was located in the facilities of related institutions and organizations, while own manufacturing and other facilities of around 25 thousand square meters were under construction. However first manufacturing line for the bare planar bipolar n-p-n transistor was launched even before the construction works were finished.
1964
Upon the order of the governmental committee for electronics # 50 from March 3rd, 1964 the Research Institute for Molecular Electronics (now CS “MERI”) was founded
1962
Research Institute for precise mechanical Engineering was founded (today known as CS Research Institute for Precise Mechanical Engineering)
1959
Voronezh semiconductor manufacturing facility (now VSPP- Mikron) was founded.
Around 1950th-1960th became the birth time for a completely new science branch – microelectronics. Concerned about international competitiveness and national security Soviet authorities decided to establish a whole range of scientific research institutions and manufacturing facilities that laid the foundation for microelectronic industry in the Soviet Union.