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Products

A closed production chain allows for maximum traceability and security products.
Mikron group of companies offers customers large Schottky diodes portfolio with leading technical characteristics, TVS and ESD protection devices and fast recovery diodes. Discrete semiconductor devices are manufactured by Voronezh manufacturing facility, part of the Mikron group of companies.

Discrete semiconductor devices are available as wafer and packaged. Minimal order for packaged devices starts from 100.000 ICs.

Sales geography: Discrete semiconductor devices are manufactured by VSP-Mikron (Voronezh manufacturing facility), part of Mikron group of companies and supplied to customers (OEMs and electronic components distributors) in Germany, China, Taiwan, South Korea, Philippines and in the USA. Customers throughout the world validate the leading technical characteristics of supplied products and VSP-Mikron commitment to quality.


  • Pt barrier Schottky Diodes
    Mikron portfolio of Schottky diodes is recognized for its leading technical characteristics. All of them are available as wafer and packaged.

    Item Description Vrrm, V If(av), A Ifsm, A VF @If(av), 25ºC, mV IR@25ºC, VR=VR, uA IR@125ºC, VR=VR, mA
    KD-02100 2A, 100V, 45mil 100 2 50 800 3 4
    KD-02150 2A, 150V, 45mil 150 2 50 860 3 4
    KD-02200 2A, 200V, 45mil 200 2 50 850 3 4
  • Mo barrier Schottky Diodes

    Item Description Vrrm, V If(av), A Ifsm, A Vf @If(av), 25ºC, mV Ir@25ºC, VR=VR, uAIR@25ºC, VR=VR, uA IR@125ºC, VR=VR, mAIR@125ºC, VR=VR, mA
    KDM-03040 G 3A, 40V, 55mil 40 3 80 510 35 23
    KDM-03065 G 3A, 65V, 55mil 65 3 80 620 100 30
    KDM-03040 J 3A, 40V, 69mil 40 3 125 450 50 35
  • Cr barrier Schottky Diodes

    Item Description Vrrm, V If(av), A Ifsm, A VF @If(av), 25ºC, mV IR@25ºC, VR=VR, mA IR@125ºC, VR=VR, mA
    KDS2127A 0.5A, 15V, 35mil 15 0,5 30 310 0,8 13
    KDS2127B 0.5A, 15V, 39mil 15 0,5 40 300 0,9 15
    KDS2127V 0.5A, 25V, 39mil 25 0,5 40 320 0,4 15
  • Ti barrier Schottky Diodes

    Item Description Vrrm, V If(av), A Ifsm, A VF @If(av), 25ºC, mV Ir@25ºC, VR=VR, mA Ir@125ºC, VR=VR, mA
    KDT-00520 0.5A 0,5A, 20V, 18mil 20 0.5 5 450 0,1 15
    KDT-01008B 0.5A 1A, 8V, 39mil 8 1 40 250 10 350
  • TVS diodes and arrays; LC and RS EMI filters

    Item Chip Size, mm Chip Thickness, mm Vbr, V IR, uA Cj, pF i/o-gnd / i/o-i/o Ipp, A Ppp, W
    SM-05 0,45*0,45 230+/-20um 6,1-7,1 <1,0@5V <200 15 250
    SM-05A 0,58*0,58 230+/-20um >6,0 <5,0@5V <350 24 350
    SM-12N 0,58*0,58 230+/-20um 13,3-16,3 <0,9@12V <150 12,5 300
  • Fast recovery diodes
    Item Description Vrrm, V If(av), A U пр. max, В
    VF @If(av), 25ºC, V
    IR@25ºC, VR=VR, uA TRR@1A, 30V, 100A/uS
    KD10040UF 100A, 400V, 220*220mil 400 100 1,3 50 70
    KD0560UF 5A, 600V, 68mil 600 5 1,5 10 50