Technologies

Technology and process development is one of Mikron focus areas.

Mikron implements a fair range of technologies for production of analog power management ICs, digital Flash memory products, RFID-chips, microprocessors and microcontrollers, as well as other IC products. 
Technology and process development is one of Mikron focus areas. We constantly conduct research and testing to enrich available technology portfolio and to broaden the range of manufactured IC products.

8” FAB

Mikron 8” FAB provides manufacturing facilities for IC products with 6-8 Me with supported topology range from 250 to 65 nm. The 90 nm line was launched in collaboration with the leading international IC manufacturer – STMicroelectronics in a large-scale technology transfer process. The project started in 2010. Manufacturing line was launched in February 2012. 

Technology Base technology Voltage, V (core / I/O) #Me Options Design rules and libraries IP Suitable for:
HCMOS8D CMOS 0.18 µm HCMOS8D_6M_3.3V 1,8 / 3,3 6 HIPO, MIM Cadence Design Framework II 5.10.41_USR5.90.69,
Cadence Spectre MMSIM 6.2.0.445,
Mentor Graphics Calibre DRC\LVS\xRC V2007.3_36.25,
Mentor Graphics Eldo V6.8_3.1
Yes • High performance universal microcontrollers and microprocessors
• Memory VLSIs, GLONASS navigation and digital TV VLSIs
• High performance DA/AD converters, etc. 
HCMOS8D_6M_5V 1.8 / 5 / 3,3 6 HIPO, MIM, OTP Cadence Design Framework II 5.10.41.500.6.147,
Cadence Spectre version 11.1.0,
Mentor Graphics Calibre DRC\LVS\xRC  2012.2_36.25,
Mentor Graphics Eldo 2009.1
Yes
CMOSF8 CMOS + EEPROM 0.18 µm CMOSF8_4M_5V 1,8 / 54EEPROMCadence Design Framework II 5.10.41.500.6.147,
Cadence Spectre version 11.1.0,
Mentor Graphics Calibre DRC\LVS\xRC v2010.2_38.23,
Mentor Graphics Eldo 2009.1
Да • RFID chips (transport tickets, etc.)
• ICs for smart-cards (ID documents)
• Microcontrollers and specialized VLSIs with low power consumption
HCMOS10_LP CMOS 90 nm HCMOS10_LP_7M_2.5V 1.2 / 2.5 7 Cu + 1Al Thick Me, MIM Cadence Design Framework II 5.10.41.500.6.147,
Cadence MMSIM 7.2.0.593.isr22,
Cadence Extraction QRC 12.1.1-s782,
Cadence Phisical Veryfication System 13.1.0-p286_1,
Cadence EDI V12.00-p002,
Mentor Graphics Calibre DRC\LVS\xRC Ixl_cal_2010.2_38.23,
Mentor Graphics Eldo 2009.1
Yes • High performance universal microcontrollers and microprocessors
• Memory VLSIs, GLONASS navigation and digital TV VLSIs
• High performance FPGAs, etc.
HCMOS10_LP_9M_2.5V 1.2 / 2.5 9 - Cadence Design Framework II 5.1.41_USR3,
Cadence Spectre MMSIM 7.1,
Mentor Graphics Calibre DRC\LVS\xRC V2006.1_19.20,
Mentor Graphics Eldo V6.7_1.2 (2006.1p084006)
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HCMOS065_LP 65 nm* HCMOS065_LP_8M_1.2V 1.2 / 2.5 8 Cu + 1Al - Cadence Design Framework II IC6.1.5.72,
Cadence Spectre 7.2.0.373.isr13,
Cadence PVS 13.1.0-s488,
Mentor Graphics Calibre DRC\LVS\xRC v2011.4_22.20

*Under development

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6” FAB

Mikron 6” FABs are located in Moscow (Zelenograd) and Voronezh and offer bipolar and planar technology for power management ICs and planar for Schottkey diodes with 1-2 Me and supported topology range from 1.6-2 µm.

Technology Voltage, V #Me Products
Bipolar, 2 µm Trench - option 10V, 20V, 30V, 45V, 60V 1/2 DC-DC / AC-DC converters; voltage regulators; comparators and operational amplifiers; reference voltage sources; voltage and current control ICs
CMOS, 1.6-2 µm 7V, 15V, 30V 1 Me, 1 polySi LDOs, AC-DC converters, mixed signal ICs
HV-CMOS (ВСD) 700V 1 Me, 1 polySi LED-drivers
Planar:
Pt (IF: 1A - 100A);
Mo (IF: 3A - 60A);
Cr (IF: 0.5A - 30A);
Ti (IF: 1A)
Pt (Vrrm: 45V - 250V)
Mo Vrrm: 30V - 60V)
Cr (Vrrm: 15V - 40V)
Ti (Vrrm: 8V - 20V)
Schottky diodes, RC filters, TVS diodes and arrays, EMI filters, fast recovery diodes
Planar HV 400V - 1800V 2500V - 6500V* Ultrafast recovery Schottky diodes, IGBTs
BCD 40V DC-DC converters
Thin film resistors RCDL arrays, resistors, reactors, inductance diodes
Trench MOS* Trench Schottky diodes, trench MOSFET, trench IGBTs
*Under development

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